The 2026 infrared experiment shows a distinct thermal-imaging response in the patterned region of a Lifetune silicon wafer compared with its smooth periphery. Lukyanov and Makarov interpret that contrast as a higher emissivity in the region containing the self-affine ring grooves.
The physical experiment
A 20 × 20 × 1 mm silicon wafer was repeatedly heated and cooled using a Peltier element. A Testo 890 thermal imager, operating in the 8–14 µm infrared range, recorded the patterned center, polished periphery and Peltier surface. The etched grooves were 0.2 µm wide and 0.8 µm deep.
What the images show
During heating, the patterned center displayed higher apparent temperatures than the neighboring polished silicon. The authors explain the contrast through differing infrared emissivity and relate it to their charge-carrier concentration model. The published figures show the thermal cycles and the derived emissivity behavior.
Published paper and manuscript
Gennadi Lukyanov and Sergei Makarov. Experimental Study of the Behavior of a Silicon Wafer with Self-affine Surface Relief During Periodic Heating and Cooling. Proceedings of the 11th International Congress on Information and Communication Technology, ICICT 2026, London, Volume 1. Lecture Notes in Networks and Systems 2029, pages 54–63. First online June 30, 2026.
Read the published open-access Springer chapter · Read the author manuscript
How this advances the research program
The experiment brings infrared surface measurements alongside the earlier published electromagnetic-response model. Its measured result is the thermal-imaging contrast; the authors use it to examine the physical model of the patterned semiconductor.
Explore the emissivity interpretation, the research-development story and the full physical-research program.
Updated October 25, 2026 · Josh, Aires. Original research and expert peer reviews are credited to their authors and linked above.