Thermal Imaging Confirms Unique Electromagnetic Properties of Aires Resonator Surface — ICICT 2026

By Aires Research

Study Type: Experimental physics — thermal imaging of semiconductor resonator

Conference: 11th International Conference on Information and Communication Technology (ICICT 2026), London, UK, February 24–27, 2026

Authors: Gennadi Lukyanov, Sergei Makarov

Institution: Faculty of Control Systems and Robotics, ITMO University, Saint Petersburg, Russia

Object of Study: Lifetune silicon resonator — 20 mm × 20 mm × 1 mm, self-affine ring grooves (0.2 μm wide, 0.8 μm deep)

Instruments: Peltier battery (thermal source) · Testo 890 thermal imager (8–14 μm sensitivity)

Background and Purpose

Previous computational work by Kopyltsov and Lukyanov (2007, 2022) modeled the Aires silicon resonator as a MOSFET-like structure: when an electromagnetic field is applied, the self-affine groove pattern causes electric charge carriers to concentrate preferentially in the groove regions, producing a non-uniform charge distribution across the wafer surface.

This 2026 paper by Lukyanov and Makarov tested a direct physical prediction: if charge carriers concentrate in the groove regions under electromagnetic exposure, they should also concentrate there under thermal excitation. Thermal imaging can reveal this indirectly through emissivity differences.

The experimental question: Does the self-affine relief region of a Lifetune silicon resonator behave differently from the smooth peripheral region when both are subjected to the same temperature? Thermal imaging measures apparent temperature from infrared emission — if the relief region emits more infrared at the same actual temperature, it has higher emissivity, indicating higher charge carrier concentration.

Experimental Setup

  • The resonator was placed on a Peltier battery and subjected to periodic heating and cooling by reversing the current polarity
  • Surface temperature distribution recorded using a Testo 890 thermal imager (spectral sensitivity: 8–14 μm)
  • Three temperature readings tracked: (1) Peltier battery surface, (2) central region with self-affine relief, (3) peripheral region (smooth polished silicon)

Results

Key Measurement Outcome

  • During heating, the apparent temperature of the central region (with relief) was consistently significantly higher than the peripheral region (smooth silicon)
  • Both regions are parts of the same physical object and therefore must have the same actual temperature
  • The only explanation: the emissivity coefficient of the central (relief) region is significantly higher than the smooth peripheral region
  • The emissivity of the central region approached that of the Peltier battery surface (ε ≈ 0.8)
The critical puzzle — and its solution: The groove width (0.2 μm) is incomparably smaller than the Testo 890's spectral sensitivity range (8–14 μm). Grooves of that width cannot trap or absorb infrared radiation through cavity geometry alone. Something else is absorbing the infrared radiation: free electrons. In semiconductors, free-electron light absorption increases with wavelength — exactly matching the infrared range measured. The concentration of free electrons is exponentially higher in the groove regions due to charge carrier redistribution driven by the self-affine topology.
Region Surface Type Measured Emissivity Explanation
Peltier battery surface Aluminum radiator ε ≈ 0.8 Reference — known value
Central resonator (with relief) Self-affine ring grooves Up to ε ≈ 0.8 Elevated electron concentration → increased free-electron IR absorption
Peripheral resonator Polished silicon Much lower Baseline for undoped smooth silicon
What this means for EMF modulation: The thermal experiment validates the charge concentration model that underpins the resonator's electromagnetic interaction mechanism. If charge carriers concentrate in grooves under thermal excitation, they do the same under electromagnetic excitation. This concentration is what enables the resonator to interact with incoming EM fields.

Connection to Previous Work

  • 2007 (Kopyltsov, Lukyanov, Serov, PhysCon 2007): First computational treatment of the resonator's EM response
  • 2022 (Kopyltsov, Lukyanov, Serov, ICICT 2022): Computer simulation — published in ICICT Springer proceedings (Vol. 1, pp. 85–92)
  • 2026 (Lukyanov, Makarov, ICICT 2026): First experimental physical validation using thermal imaging

Authors and Institution

Gennadi Lukyanov, Ph.D. and Sergei Makarov — Faculty of Control Systems and Robotics, ITMO University, St. Petersburg, Russia

Conclusions

Periodic heating of the Lifetune silicon resonator reveals that the central self-affine relief region consistently emits significantly more infrared radiation than the smooth peripheral silicon — despite being at the same actual temperature. This higher emissivity is explained by elevated free-electron concentration in the groove regions, directly validating the charge concentration model used in electromagnetic simulations.

Source: Lukyanov, G., & Makarov, S. (2026). Experimental study of the behavior of a silicon wafer with self-affine surface relief during periodic heating and cooling. ICICT 2026, London, UK, February 24–27, 2026.

Tags: 2026, conference paper, electron absorption, emissivity, fractal resonator, ICICT 2026, ITMO University, Lukyanov, Makarov, peer reviewed, physics validation, self-affine surface, silicon wafer, thermal imaging